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AM83135-001
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
.REFRACTORY/ .EMI .10: .LOW .I .OVERLAY .METAL/ .P
DESCRIPTION
G OLD METALL IZATION TTER SITE BALLASTED 1 VSWR CAPABILITY THERMAL RESISTANCE N PUT/OUTPUT MATCHING GEOMETRY CERAMIC HERMETIC PACKAGE OUT = 1.0 W MIN. WITH 5.2 dB GAIN
.400 x .400 2NLF L (S042) hermetically sealed O RDER CODE AM83135-001 BRANDING 83135-1
PIN CONNECTION
The AM83135-001 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 10:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency. The AM83135-001 is supplied int the AMPACTM Hermet ic/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability apABSOLUTE MAXIMUM RATINGS (T case = 25C)
Symbol Parameter Value Un it 1. Collector 2. Base 3. Emitter 4. Base
PDISS IC VCC TJ TSTG
Power Dissipation* Device Current*
(TC 100C)
11.5 0.45 34 250 - 65 to +200
W A V C C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA Junction-Case Thermal Resistance* RTH(j-c)
*Applies only to rated RF amplifier operation
13.0
C/W
February 3, 1997
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AM83135-001
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symb ol Test Con ditio ns Value Min. T yp. Max. Unit
BVCBO BVEBO BVCER ICES hFE
IC = 1mA IE = 1mA IC = 1mA VBE = 0V VCE = 5V
IE = 0mA IC = 0mA RBE = 10 VCE = 30V IC = 100mA
45 3.5 45 -- 10
-- -- -- -- --
-- -- -- 1 --
V V V mA --
DYNAMIC
Symb ol T est Co nditi ons Value Min. Typ . Max. Un it
POUT c GP
Note:
= 3.1 -- 3.5GHz f = 3.1 -- 3.5GHz f = 3.1 -- 3.5GHz
f = =
100 10%
PIN = 0.3W PIN = 0.3W PIN = 0.3W
VCC = 30V VCC = 30V VCC = 30V
1.0 27 5.2
1.4 35 6.7
-- -- --
W % dB
P uls e Wi dth D uty Cycl e
S
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AM83135-001
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
ZIN
ZIN PIN = 0.3 W VCC = 30 V ZO = 50 ohms H L
FREQ. L = 3.1 GHz M = 3.3 GHz H = 3.5 GHz
ZIN () 46.0 + j 14.5 43.0 + j 10.0 38.0 + j 10.0
ZCL () 12.0 - j 0.0 11.0 - j 6.5 9.0 - j 15.0
TYPICAL COLLECTOR LOAD IMPEDANCE
ZCL
L
ZCL
PIN = 0.3 W VCC = 30 V ZO = 50 ohms
H
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AM83135-001
TEST CIRCUIT
All dimensions are in inches. Substrate material: .025 thick AI2O3 C1 C2 C3 L1 L2 : : : : : 1500 pF RF Feedthrough 100 MF Electrolytic 100 pF Chip No. 26 Wire, 4 Turn .062 I.D. Printed RF Choke
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PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0213 rev. A UDCS No. 1011416
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c)1997 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland Taiwan - Thailand - United Kingdom - U.S.A.
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